HEMT-heterostructures

FOB Reference Price:Get Latest Price
1 Box/Boxes (Min. Order)
Report Suspicious Activity
Overview
Quick Details
Place of Origin:
Russian Federation
Brand Name:
Epi-Nano
Model Number:
Epi-HEMT-2
Growth:
NH3-MBE
Wafer size:
2 inch (50,8 mm)
Substrate type:
Al2O3 (0001), 6H-SiC

Specifications

HEMT-heterostructures is used for high speed IC and other electronic devices based on quantum effects production

 

HEMT  heterostructures

Growth

NH3-MBE

Diameter

50,8 mm

Substrate type

Al2O3 (0001), 6H-SiC

Layers

Al0.33Ga0.67N         

28 nm

AlN-spacer   

 2 nm

GaN    

 2000 nm

grad AlxGa1-xN     

210 nm

AlN          

  200-500 nm

Substrate


 

Carrier density

1,25·1013 cm-2

Mobility

1600 cm2/V·s

 

You May Like
Not exactly what you want? 1 request, multiple quotations Get Quotations Now >>
You May Like