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Quick Details

  • Place of Origin: Russian Federation
  • Brand Name: Epi-Nano
  • Model Number: Epi-HEMT-2
  • Growth: NH3-MBE
  • Wafer size: 2 inch (50,8 mm)
  • Substrate type: Al2O3 (0001), 6H-SiC

Specifications

HEMT-heterostructures is used for high speed IC and other electronic devices based on quantum effects production

 

HEMT  heterostructures

Growth

NH3-MBE

Diameter

50,8 mm

Substrate type

Al2O3 (0001), 6H-SiC

Layers

Al0.33Ga0.67N         

28 nm

AlN-spacer   

 2 nm

GaN    

 2000 nm

grad AlxGa1-xN     

210 nm

AlN          

  200-500 nm

Substrate


 

Carrier density

1,25·1013 cm-2

Mobility

1600 cm2/V·s

 

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