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Quick Details

  • Place of Origin: Russian Federation
  • Brand Name: Epi-Nano
  • Model Number: Epi-GaN-2
  • Growth: NH3-MBE
  • Type: i-type, n-type
  • Wafer size: 2 inch (50,8 mm)
  • Orientation: (0001) C-axis, ±1°
  • Resistivity: > 10 MOm*cm (i-type), 0,5 Om*cm (n-type)
  • Finish: epi-ready
  • Surface roughness: 1-3 nm
  • Useful surface: >90%

Specifications

GaN template is used for development of HEMT structures, resonant tunneling diodes and acoustoelectronic devices

 

Characteristics

Value

 Growth

NH3-MBE

Type

i-type

n-type

Wafer size

2” (50,8 mm)

Orientation

(0001) C-axis, ±1°

Resistivity

> 106 Ω·cm

0,5 Ω·cm

 Dislocation density

108 cm-2

Finish

epi-ready

Surface roughness

1-3 nm

Useful surface

>90%

Package

One wafer box

 

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