GaN template

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1 Box/Boxes (Min. Order)
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Overview
Quick Details
Place of Origin:
Russian Federation
Brand Name:
Epi-Nano
Model Number:
Epi-GaN-2
Growth:
NH3-MBE
Type:
i-type, n-type
Wafer size:
2 inch (50,8 mm)
Orientation:
(0001) C-axis, ±1°
Resistivity:
> 10 MOm*cm (i-type), 0,5 Om*cm (n-type)
Finish:
epi-ready
Surface roughness:
1-3 nm
Useful surface:
>90%

Specifications

GaN template is used for development of HEMT structures, resonant tunneling diodes and acoustoelectronic devices

 

Characteristics

Value

 Growth

NH3-MBE

Type

i-type

n-type

Wafer size

2” (50,8 mm)

Orientation

(0001) C-axis, ±1°

Resistivity

> 106 Ω·cm

0,5 Ω·cm

 Dislocation density

108 cm-2

Finish

epi-ready

Surface roughness

1-3 nm

Useful surface

>90%

Package

One wafer box